微波烧结过程中AlN密度均匀性的原位实验研究
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中国科学技术大学 中国科学院材料力学行为和设计重点实验室

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In-situ experimental study of AlN density uniformity during microwave sintering
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    摘要:

    氮化铝凭借高导热性和优异热稳定性,成为电子封装领域理想散热材料,但其强共价键特性导致低温烧结致密化困难。采用同步辐射计算机断层成像技术对纯氮化铝在微波作用下的微观结构演化进行研究。实验发现微波烧结后氮化铝样品致密度分布不均匀:竖直方向致密度由下至上梯度递减,水平方向均匀分布。提出"库仑力"驱动机制,解释了微波电场对致密度分布的调控作用——竖直方向的氮化铝颗粒间形成异种电荷吸引的正反馈循环,加速局部致密化;水平方向的颗粒则受多种电荷作用的排斥力,实现间距均匀化。该机制为微波烧结制备密度均匀分布的氮化铝陶瓷提供方案,对高导热电子封装材料工艺优化有参考意义。

    Abstract:

    Aluminum nitride (AlN) has become an ideal heat dissipation material in the field of electronic packaging due to its high thermal conductivity and excellent thermal stability, but its strong covalent bonding properties make low-temperature sintering and densification difficult. The microstructure evolution of pure AlN under microwave irradiation was studied using synchrotron radiation computed tomography technology. The experiment found that the density distribution of AlN samples after microwave sintering was uneven: the density gradient decreased from bottom to top in the vertical direction, and was uniformly distributed in the horizontal direction. Proposed the "Coulomb force" driving mechanism and explained the regulatory effect of microwave electric field on density distribution - the positive feedback loop of heterogeneous charge attraction between vertically oriented AlN particles accelerates local densification; Horizontal particles are subject to repulsive forces from various charges, achieving uniform spacing. This mechanism provides a solution for microwave sintering to prepare AlN ceramics with uniform density distribution, which has reference significance for optimizing the process of high thermal conductivity electronic packaging materials.

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  • 收稿日期:2025-04-10
  • 最后修改日期:2025-05-31
  • 录用日期:2025-06-03
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