| 马路路,程翠丽,雷振坤,赵煜乘,仇巍*.锗硅缓冲双轴应变硅材料ε-Si/Ge0.3Si0.7/GexSi1-x/C-Si内部残余应力的显微拉曼实验分析[J].实验力学,2016,31(3):306~314 |
| 锗硅缓冲双轴应变硅材料ε-Si/Ge0.3Si0.7/GexSi1-x/C-Si内部残余应力的显微拉曼实验分析 |
| Experimental Analysis for Residual Stress Inside Biaxial Strained Silicon Material with Germanium Silicon Buffers (ε-Si/Ge0.3Si0.7/GexSi1-x/C-Si) by using Micro-Raman |
| 投稿时间：2015-07-01 修订日期：2015-09-28 |
| DOI：10.7520/1001-4888-15-114 |
| 中文关键词: 应变硅 半导体多层异质结构 横截面样品 显微拉曼光谱 残余应力 |
| 英文关键词:strained silicon semiconductor multilayer heterojunction structure cross-section sample micro-Raman spectroscopy residual stress |
| 基金项目:国家重点基础研究发展计划(2012CB937500)、国家自然科学基金(11422219、11227202, 11272232和11172054)和2013教育部新世纪优秀人才支持计划资助 |
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| 中文摘要: |
| 应变硅技术是一种被称为延续摩尔定律的技术，是集成微电子技术的热点之一。本文以锗硅缓冲双轴应变硅材料(ε-Si/Ge0.3Si0.7/GexSi1-x/C-Si)为研究对象，采用显微拉曼光谱技术，开展了该多层半导体异质结构内部残余应力的实验力学分析。这是面向多层结构残余应力与表/界面力学行为的多尺度实验力学分析，本文首先简述了该应变硅的制造工艺和超低粗糙度横截面样品的加工方法，并推导了针对锗硅合金拉曼-力学测量修正关系，进而对应变硅样品的表面和横截面进行了显微拉曼力学测量实验，给出了多层异质结构内部的残余应力分布，并以此为基础讨论了多层界面的力学行为。 |
| 英文摘要: |
| Strained silicon is a technique known as the continuation of Moore's law. It is one of the hot spots of integrated microelectronics technology. In this paper, adopting micro-Raman spectroscopy, taking biaxial strained silicon material with germanium silicon buffer (ε-Si/Ge0.3Si0.7/GexSi1-x/C-Si) as study object, residual stress inside this semiconductor multilayer heterojunction structure was experimentally investigated. This is a multi-scale experimental mechanics analysis for residual stress and surface/interface mechanical behavior of multi-layer structure. The fabrication process of this strained silicon and machining method of sample with ultra-low roughness cross-section were briefly introduced before multi-scale mechanical analyses. Raman-mechanical measurement correction relationship of germanium silicon alloy was deduced. Micro-Raman mechanical measurement for strained silicon sample surface and cross-section was carried out, the residual stress distribution inside the strained silicon semiconductor multilayer heterojunction structure was obtained. Based on above results, the mechanical behavior of multilayer interface was discussed. |
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