| 高智逊,马路路,邢华丹,赵煜乘,仇巍*.基于透射电镜晶格图像数字云纹的应变测量方法[J].实验力学,2019,34(2):191~199 |
| 基于透射电镜晶格图像数字云纹的应变测量方法 |
| Strain measurement method based on digital Moiré of transmission electron microscope lattice image |
| 投稿时间：2018-05-25 修订日期：2018-07-26 |
| DOI：10.7520/1001-4888-18-125 |
| 中文关键词: 晶格图像 高分辨透射电镜(TEM) 数字云纹 应变测量 栅线转角 条纹倾角 |
| 英文关键词:lattice images high resolution transmission electron microscopy (TEM) digital Moiré strain measurement grating rotation angle fringe inclination angle |
| 基金项目:国家自然科学基金(11772223, 11772227, 61727810)资助 |
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| 中文摘要: |
| 提出一种通过量化几何转角实现应变测量的数字云纹新方法。该方法以高分辨透射电镜(TEM)获取的晶格图像为基础，通过傅立叶变换-反傅里叶变换，将TEM晶格图像生成三个不同倾角的栅线图。以已知应变状态位置获取的TEM栅线图为参考栅，以所需测量位置获得的栅线图为试件栅，分别对倾角接近的参考栅与试件栅进行逻辑运算，得到各倾角栅对应的数字云纹图像。基于几何云纹基本原理，建立参考栅与试件栅二者之间栅线倾角的变化(即栅线转角θ)、该栅线倾角所对应几何云纹条纹的倾角与栅线间距变化率(即栅线法向应变分量ε)之间的解析关系。计量栅线转角与几何云纹条纹的倾角便能够得到试件栅位置上三个不同方向的正应变，从而实现面内应变各分量的解耦测量。由于本方法获得的是高分辨TEM图像所在位置的应变平均信息，因此具有十纳米量级的空间分辨率。本文采用模拟实验对以上方法的正确性进行了验证，并将其应用于多层异质半导体结构横截面样品的应变分析，并给出了面内应变各分量的细节信息。 |
| 英文摘要: |
| Through quantifying geometric rotation angle, a new strain measurement method is presented in this paper based on digital Moiré.This method is based on lattice images obtained by high-resolution transmission electron microscope (TEM). Through Fourier transform and inverse Fourier transform, TEM lattice images are generated into three grid diagrams with different inclination angles. Taking TEM grating image obtained from the known strain state position as the reference grating image and taking grating image obtained from the required measuring position as the specimen grating image, the logical operation of specimen grating image with the inclination angle approaching that of the reference grating image are carried out, respectively, and digital Moiré images corresponding to each inclination angle grating image are obtained. Based on the principle of geometric Moiré, an analytical relationship between the angle increment of the grating inclination (viz. grating rotation angle), θ, the fringe inclination angle, , and the normal strain of the grating, ε, was established. By quantify the θ and in the digital Moiré images and the grating images, the normal strains along the three inclination angles of the gratings was detected, hence all of the in-plane strain components were acquired. The proposed method obtains the average strain of the high-resolution TEM image, hence it has a spatial resolution in ten nanometer magnitude. In this work, verification experiments were preformed, proved the correctness of the above method. Then, it was applied to analyzed the strain inside the multi-layer semiconductor heterostructure, achieving the detail information of the in-plane strain components. |
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