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| 纳米压痕残余应力场拉曼光谱实验研究 |
| Experimental Study of Raman Spectroscopy on Nano-indentation Residual Stress Field |
| Received:September 11, 2014 Revised:November 28, 2014 |
| DOI：10.7520/1001-4888-14-177 |
| 中文关键词: 纳米压痕 拉曼光谱成像 残余应力 晶格结构 |
| 英文关键词:Nano-indentation Raman imaging residual stress lattice structure |
| 基金项目:国家重点基础研究发展计划(2012CB937500), 国家自然科学基金(11372217和11002097)资助 |
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| 中文摘要: |
| 本文采用纳米压入仪在晶向为〈111〉和〈100〉的两种单晶硅片表面压入1000nm,卸载后得到深度约为550~570nm的压痕。使用共聚焦显微拉曼光谱仪对压痕周边区域进行测量,采用场扫描成像技术得到了压痕周边拉曼频移、半高宽、峰强等拉曼信息,通过分析由频移求得残余应力场的分布。在实验的基础上讨论了残余应力场的分布,以及晶向对应力场分布的影响,近似给出了压痕边缘最大压应力与微裂纹尖端最大拉应力。对其他拉曼信息的分析表明,半高宽和峰强信息与材料晶格结构的变化相关,在一定程度上也可以反映残余应力的作用。 |
| 英文摘要: |
| A Berkovich indenter was pressed into Si 〈111〉 and Si 〈100〉 until the depth of 1000nm and some 550nm-570nm indentations were generated after unloading. The areas surrounding the indentations were measured by using a confocal micro Raman spectrometer. Then the information of Raman shift, FWHM and intensity around the indentations was obtained by using field scanning imaging technique, and the distribution of residual stress was obtained by analyzing Raman shift. Based on the experiment, the distribution of residual stress and the influence of crystal orientation were discussed. The approximation of the maximum compressive stress near the edge of the indentation and the maximum tensile stress near the crack tip were provided. By analyzing some other Raman information it is found that FWHM and intensity are related to the variety of lattice structure and this can reflect the effects of residual stress to some extent. |
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